| 产品名称/Product | Dongting-N3 | |||||
|---|---|---|---|---|---|---|
| 外形/Form Factor | U.2 , E3.S | |||||
| 接口/Interface | PCIe Gen5 ×4, NVMe 2.0 | |||||
| 容量/Capacity | 3.2TB | 3.84TB | 6.4TB | 7.68TB | 12.8TB | 15.36TB |
| 型号码/MN Number | YRN3TU2E3200YA | YRN3TU2E3840YA | YRN3TU2E6400YA | YRN3TU2E7680YA | YRN3TU2E12T8YA | YRN3TU2E15T3YA |
| 128KB 顺序读 (GB/s) 128KB Sequential Read (GB/s) | 14.6 | 14.6 | 14.6 | 14.6 | 14.6 | 14.6 |
| 128KB 顺序写 (GB/s) 128KB Sequential Write (GB/s) | 6 | 6 | 11.3 | 11.3 | 10.6 | 10.6 |
| 4KB 随机读 (IOPS) Sustained Random Read (4KB) IOPS | 3000K | 3000K | 3500K | 3500K | 3200K | 3200K |
| 4KB 随机写 (IOPS) Sustained Random Write (4KB) IOPS | 550K | 240K | 1000K | 510K | 1100K | 560K |
| 4KB 随机读延时 (μs) 4KB Random Read Latency (μs) | 54 | 54 | 54 | 54 | 54 | 54 |
| 4KB 随机写延时 (μs) 4KB Random Write Latency (μs) | 5 | 5 | 5 | 5 | 5 | 5 |
| 典型功耗 (W) Typical Power(W) | 16 | 16 | 22.5 | 22.5 | 24.5 | 24.5 |
| 空闲功耗 (W) ldle Power (W) | 5 | 5 | 5 | 5 | 5 | 5 |
| DWPD, 5 years | 3 DWPD | 1 DWPD | 3 DWPD | 1 DWPD | 3 DWPD | 1 DWPD |
| MTBF | 250 万小时(2.5 million hours) | |||||
| UBER | ≤ 10^-18 | |||||
| 介质类型 NAND Flash Type | eTLC NAND Flash | |||||
| 工作温度 Operating Temperature | 0℃ ~ 70℃ | |||||
| 可定制的数据安全方案 Customizable Data Security Solution | 国密标准：SM2/3/4 高级加密标准：AES-128/256 安全散列算法：SHA3-256/384/512，SHA256 RSA1024/2048/3072/4096 TCG Opal 2.01 |
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备注：产品性能因操作系统和固件版本不同会存在差异。 |
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| 产品名称/Product | Dongting-N3 | |||
|---|---|---|---|---|
| 外形/Form Factor | U.2 , E3.S | |||
| 接口/Interface | PCIe Gen5 ×4, NVMe 2.0 | |||
| 容量/Capacity | 3.2TB | 3.84TB | 6.4TB | 7.68TB |
| 型号码/MN Number | YRN3TU2E3200YB | YRN3TU2E3840YB | YRN3TU2E6400YB | YRN3TU2E7680YB |
| 128KB 顺序读 (GB/s) 128KB Sequential Read (GB/s) | 14.5 | 14.5 | 14.6 | 14.6 |
| 128KB 顺序写 (GB/s) 128KB Sequential Write (GB/s) | 9.5 | 9.5 | 12.4 | 12.4 |
| 4KB 随机读 (IOPS) Sustained Random Read (4KB) IOPS | 3500K | 3500K | 3500K | 3500K |
| 4KB 随机写 (IOPS) Sustained Random Write (4KB) IOPS | 950K | 500K | 1100K | 620K |
| 4KB 随机读延时 (μs) 4KB Random Read Latency (μs) | 52 | 52 | 52 | 52 |
| 4KB 随机写延时 (μs) 4KB Random Write Latency (μs) | 5 | 5 | 5 | 5 |
| 典型功耗 (W) Typical Power(W) | 20.6 | 20.6 | 24.1 | 24.1 |
| 空闲功耗 (W) ldle Power (W) | 4.7 | 4.7 | 4.7 | 4.7 |
| DWPD, 5 years | 3 DWPD | 1 DWPD | 3 DWPD | 1 DWPD |
| MTBF | 250 万小时(2.5 million hours) | |||
| UBER | ≤ 10^-18 | |||
| 介质类型 NAND Flash Type | eTLC NAND Flash | |||
| 工作温度 Operating Temperature | 0℃ ~ 70℃ | |||
| 可定制的数据安全方案 Customizable Data Security Solution | 国密标准：SM2/3/4 高级加密标准：AES-128/256 安全散列算法：SHA3-256/384/512，SHA256 RSA1024/2048/3072/4096 TCG Opal 2.01 |
|||
备注：产品性能因操作系统和固件版本不同会存在差异。 |
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